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NTLJS4159N
THERMAL RESISTANCE RATINGS
Parameter
Junction?to?Ambient – Steady State (Note 3)
Junction?to?Ambient – t ≤ 5 s (Note 3)
Junction?to?Ambient – Steady State Min Pad (Note 4)
Symbol
R q JA
R q JA
R q JA
Max
65
38
180
Unit
° C/W
3. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
4. Surface Mounted on FR4 Board using the minimum recommended pad size (30 mm 2 , 2 oz Cu).
MOSFET ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain?to?Source Breakdown Voltage
Drain?to?Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
V (BR)DSS
V (BR)DSS /T J
I DSS
V GS = 0 V, I D = 250 m A
I D = 250 m A, Ref to 25 ° C
T J = 25 ° C
T J = 65 ° C
V DS = 24 V, V GS = 0 V
30
20
1.0
1.0
V
mV/ ° C
m A
T J = 85 ° C
5.0
Gate?to?Source Leakage Current
I GSS
V DS = 0 V, V GS = ± 8.0 V
± 100
nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
V GS(TH)
V GS = V DS , I D = 250 m A
0.4
0.7
1.0
V
Negative Gate Threshold
V GS(TH) /T J
3.18
mV/ ° C
Temperature Coefficient
Drain?to?Source On?Resistance
R DS(on)
V GS = 4.5, I D = 2.0 A
20.3
35
m W
V GS = 2.5, I D = 2.0 A
V GS = 1.8, I D = 1.8 A
25.8
35.2
45
55
Forward Transconductance
g FS
V DS = 16 V, I D = 2.0 A
5.3
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C ISS
C OSS
C RSS
V GS = 0 V, f = 1.0 MHz,
V DS = 15 V
1045
115.5
45.3
pF
Total Gate Charge
Threshold Gate Charge
Gate?to?Source Charge
Gate?to?Drain Charge
Gate Resistance
Q G(TOT)
Q G(TH)
Q GS
Q GD
R G
V GS = 4.5 V, V DS = 15 V,
I D = 2.0 A
12.1
1.2
1.9
2.7
3.65
13
nC
W
SWITCHING CHARACTERISTICS (Note 6)
Turn?On Delay Time
t d(ON)
6.8
ns
Rise Time
Turn?Off Delay Time
Fall Time
t r
t d(OFF)
t f
V GS = 4.5 V, V DD = 15 V,
I D = 2.0 A, R G = 3.0 W
12.4
26
5.1
DRAIN?SOURCE DIODE CHARACTERISTICS
Forward Recovery Voltage
V SD
V GS = 0 V, IS = 2.0 A
T J = 25 ° C
T J = 125 ° C
0.71
0.58
1.2
V
Reverse Recovery Time
t RR
15
35
Charge Time
Discharge Time
Reverse Recovery Time
t a
t b
Q RR
V GS = 0 V, d ISD /d t = 100 A/ m s,
I S = 1.0 A
9.0
6.0
7.0
ns
nC
5. Pulse Test: Pulse Width v 300 m s, Duty Cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
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